FS08xxI Datasheet | Fagor

.. FS08...I STANDARD SCR IPAK (Plastic) On-State Current 8 Amp Gate Trigger Current >0.5 to <15 m A Off-State Voltage 200 V ÷ 600 V These series of Silicon Controlled R ectifier use a high performance PNPN technology. These parts are intended for general purpose applications where high gate sensitivity is required. Absolute Maximum Ratings, according to IEC publication No. 134 SYMBOL PARAMETER On-state Current Average On-state Current Non-repetitive On-State Current Non-repetitive On-State Current Fusing Current Peak Reverse Gate Voltage Peak Gate Current Peak Gate Dissipation Gate Dissipation Operating Temperature Storage Temperature Soldering Temperature CONDITIONS 180º Conduction Angle, Tc = 110 ºC Half Cycle, Θ = 180 º, TC = 110 ºC Half Cycle, 60 Hz Half Cycle, 50 Hz tp = 10ms, Half Cycle IGR = 10 µA 20 µs max. 20 µs max. 20ms max. -40 -40 10s max. Min. Max. 8 5 73 70 24.5 5 4 5 1 +125 +150 260 Unit A A A A A 2s V A W W ºC ºC ºC IT(RMS) IT(AV) ITSM ITSM I2t VGRM IGM PGM PG(AV) Tj Tstg Tsld SYMBOL PARAMETER Repetitive Peak Off State Voltage CONDITIONS RGK = 1 KΩ B 200 VOLTAGE D 400 M 600 Unit V VDRM VRRM Dec - 02 .. FS08...I STANDARD SCR Electrical Characteristics SYMBOL PARAMETER Gate Trigger Current Off-State Leakage Current On-state Voltage Gate Trigger Voltage Gate Non Trigger Voltage Holding Current Latching Current Critical Rate of Voltage Rise CONDITIONS VD = 12 VDC , RL = 33Ω. Tj = 25 ºC MIN MAX MAX MAX MAX MAX MIN SENSITIVITY 08 0.5 5 2 5 1.6 1.3 0.2 25 30 50 50 20 100 Tj = 125 ºC Tj = 125 ºC Tj = 125 ºC MAX MAX 0.85 46 40 50 150 09 2 15 Unit m A m A µA V V V m A m A V/µs A/µs ºC/W ºC/W V mΩ IGT IDRM / IRRM VTM VGT VGD IH IL dv / dt di / dt Rth(j-c) Rth(j-a) Tj = 125 ºC V D = VDRM , VR = VRRM , Tj = 25 ºC at IT = 16 Amp, tp = 380 µs, Tj = 25 ºC VD = 12 VDC , RL = 33Ω, Tj = 25 ºC VD = VDRM , RL = 3.3KΩ, Tj = 125 ºC Gate Open IT = 100 m A , MAX RGK = 220Ω IG = 1.2 IGT MAX VD = 0.67 x VDRM , Gate Open MIN MIN Critical Rate of...