Fairchild Semiconductor 2N5550
NPN Epitaxial Silicon Transistor
| Part No. | 2N5550 |
|---|---|
| Datasheet | 2N5550 Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | NPN Epitaxial Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● Amplifier Transistor● Collector-Emitter Voltage: VCEO = 140 V 1 TO-92 1. Emitter 2. Base 3. Collector Ordering Information Part Number 2N5550BU 2N5550TA 2N5550TAR 2N5550TF 2N5550TFR Top Mark 2N5550 2N5550 2N5550 2N5550 2N5550 Package TO-92 3L TO-92 3L TO-92 3L TO-92 3L TO-92 3L Packing Method Bulk Ammo Ammo Tape and Reel Tape and Reel
ABSOLUTE MAXIMUM RATINGS
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VCBO VCEO VEBO IC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Temperature Storage Temperature 160 V 140 V 6 V 600 mA 150 °C -55 to 150 °C © 2000 Fairchild Semiconductor Corporation 2N5550 Rev.
