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40N60A4D - HGT1N40N60A4D

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Fairchild Semiconductor

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40N60A4D HGT1N40N60A4D by Fairchild Semiconductor - Datasheet Preview — Datasheet preview – 40N60A4D

Datasheet Details

Part number	40N60A4D
Manufacturer	Fairchild Semiconductor
File Size	176.42 KB
Description	HGT1N40N60A4D
Datasheet	40N60A4D Datasheet
Additional preview pages of the 40N60A4D datasheet.

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Features

of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching.

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Published: Oct 27, 2013 |