40N60A4D Datasheet Hgt1n40n60a4d

Manufacturer: Fairchild (now onsemi)

Overview: HGT1N40N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1N40N60A4D is a MOS gated high voltage switching device bining the.

Datasheet Details

Part number	40N60A4D
Manufacturer	Fairchild (now onsemi)
File Size	176.42 KB
Description	HGT1N40N60A4D
Datasheet	40N60A4D_FairchildSemiconductor.pdf

Key Features

of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching.

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Datasheet Details

Key Features

More Datasheets from Fairchild (now onsemi)

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