Datasheet Details
| Part number | 7N65C |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 948.87 KB |
| Description | FQP7N65C |
| Datasheet |
 7N65C Datasheet
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General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Key Features
- 7A, 650V, RDS(on) = 1.4Ω @VGS = 10 V.
- Low gate charge ( typical 28 nC).
- Low Crss ( typical 12 pF).
- Fast switching.
- 100% avalanche tested.
- Improved dv/dt capability D ! GDS TO-220 FQP Series GD S TO-220F FQPF Series G!.
- ◀▲.
- ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Curren.