Fairchild Semiconductor BC637
NPN EPITAXIAL SILICON TRANSISTOR
| Part No. | BC637 |
|---|---|
| Datasheet | BC637 Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | NPN EPITAXIAL SILICON TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
● Complement to BC636/638/640 NPN Epitaxial Silicon TransistorABSOLUTE MAXIMUM RATINGS
Ta=25°C unless otherwise noted Symbol Parameter VCER Collector-Emitter Voltage at RBE=1KΩ : BC635 : BC637 : BC639 VCES Collector-Emitter Voltage : BC635 : BC637 : BC639 VCEO Collector-Emitter Voltage : BC635 : BC637 : BC639 VEBO Emitter-Base Voltage IC Collector Current ICP Peak Collector Current IB Base Current PC Collector Power Dissipation TJ Junction Temperature TSTG Storage Temperature● PW=5ms, Duty Cycle=10%
ELECTRICAL CHARACTERISTICS
Ta=25°C unless otherwise noted Symbol Parameter Test Condition BVCEO Collector-Emitter Breakdown Voltage : BC635 : BC637 : BC639 IC=10mA, IB=0 ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(on) fT Collector Cut-off Current Emitter Cut-off Current DC Current Gain : All : BC635 : BC637/BC639 : All Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product VCB=30V, IE=0 VEB=5V, IC=0 VCE=2V, IC=5mA VCE=2V, IC=150mA VCE=2V, IC=500mA IC=500mA, IB=50mA VCE=2V, IC=500mA VCE=5V, IC=10mA, f=50MHz ©2002 Fairchild Semiconductor Corporation 1 TO-92 1.
