BC637 is NPN EPITAXIAL SILICON TRANSISTOR manufactured by Fairchild.
| Manufacturer | Part Number | Description |
|---|---|---|
Continental Device India |
BC637 | SILICON PLANAR EPITAXIAL TRANSISTORS |
KEC |
BC637 | EPITAXIAL PLANAR NPN TRANSISTOR |
onsemi |
BC637 | High Current Transistors |
NXP Semiconductors |
BC637 | NPN medium power transistors |
Motorola Semiconductor |
BC637 | High Current Transistors |
BC639 VCES Collector-Emitter Voltage : BC639 VCEO Collector-Emitter Voltage : BC639 VEBO Emitter-Base Voltage IC Collector Current ICP Peak Collector Current IB Base Current PC Collector Power Dissipation TJ Junction Temperature TSTG Storage Temperature PW=5ms, Duty Cycle=10% Ta=25°C unless otherwise noted Symbol Parameter Test Condition BVCEO Collector-Emitter Breakdown Voltage.
