BC637 datasheet by Fairchild (now onsemi).
| Part number | BC637 |
|---|---|
| Datasheet | BC637_FairchildSemiconductor.pdf |
| File Size | 53.47 KB |
| Manufacturer | Fairchild (now onsemi) |
| Description | NPN EPITAXIAL SILICON TRANSISTOR |
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BC639 VCES Collector-Emitter Voltage : BC639 VCEO Collector-Emitter Voltage : BC639 VEBO Emitter-Base Voltage IC Collector Current ICP Peak Collector Current IB Base Current PC Collector Power Dissipation TJ Junction Temperature TSTG Storage Temperature PW=5ms, Duty Cycle=10% Ta=25°C unless otherwise noted Symbol Parameter Test Condition BVCEO Collector-Emitter Breakdown Voltage.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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BC637 | SILICON PLANAR EPITAXIAL TRANSISTORS | CDIL |
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BC637 | EPITAXIAL PLANAR NPN TRANSISTOR | KEC |
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BC637 | High Current Transistors | ON Semiconductor |
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BC637 | NPN medium power transistors | NXP |
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BC637 | High Current Transistors | Motorola Inc |
View all Fairchild (now onsemi) datasheets
| Part Number | Description |
|---|---|
| BC635 | NPN EPITAXIAL SILICON TRANSISTOR |
| BC636 | PNP EPITAXIAL SILICON TRANSISTOR |
| BC636TA | PNP EPITAXIAL SILICON TRANSISTOR |
| BC638 | PNP EPITAXIAL SILICON TRANSISTOR |
| BC639 | NPN EPITAXIAL SILICON TRANSISTOR |
| BC63916 | NPN Epitaxial Silicon Transistor |
| BC640 | PNP EPITAXIAL SILICON TRANSISTOR |
