BC637 Description
SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT TRANSISTORS.
BC637 Key Features
- 55ᴕ150
- Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Bas
BC637 is EPITAXIAL PLANAR NPN TRANSISTOR manufactured by KEC.
| Manufacturer | Part Number | Description |
|---|---|---|
Continental Device India |
BC637 | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BC637 | High Current Transistors | |
NXP Semiconductors |
BC637 | NPN medium power transistors |
| BC637 | NPN EPITAXIAL SILICON TRANSISTOR | |
Motorola Semiconductor |
BC637 | High Current Transistors |
SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT TRANSISTORS.