| Part Number | BC637 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
BC637, BC639, BC639-16
High Current Transistors
NPN Silicon
Features
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating Collector - Emitter Voltage
Symbol
BC637 BC639
VCEO
Value 60 80
Unit Vdc.
* These are Pb *Free Devices* MAXIMUM RATINGS Rating Collector - Emitter Voltage Symbol BC637 BC639 VCEO Value 60 80 Unit Vdc Collector - Base Voltage BC637 BC639 VCBO 60 80 Vdc Emitter - Base Voltage Collector Current * Continuous Total Device Dissipation Derate above 25°C @ TA = . |
BC637 Datasheet and Specifications PDF
The BC637 is a High Current Transistors.
| Part Number | BC637 Datasheet |
|---|---|
| Description | High Current Transistors |
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC635/D
High Current Transistors
NPN Silicon
COLLECTOR 2 3 BASE 1 EMITTER
BC635 BC637 BC639
MAXIMUM RATINGS
Rating Collector – Emitter.
V(BR)CEO BC635 BC637 BC639 V(BR)CBO BC635 BC637 BC639 V(BR)EBO ICBO * * * * 100 10 nAdc µAdc 45 60 80 5.0 * * * * * * * * Vdc 45 60 80 * * * * * * Vdc Vdc Collector * Base Breakdown Voltage (IC = 100 µAdc, IE = 0) Emitter * Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (V. |
| Part Number | BC637 Datasheet |
|---|---|
| Description | NPN medium power transistors |
| Manufacturer | NXP Semiconductors |
| Overview |
NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC636, BC638 and BC640. PINNING PIN 1 2 3
BC635; BC637; BC639
DESCRIPTION base collector emitter
1 handbook, halfpage
2 3
2 1 3
.
* High current (max. 1 A) * Low voltage (max. 80 V). APPLICATIONS * Driver stages of audio/video amplifiers. DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC636, BC638 and BC640. PINNING PIN 1 2 3 BC635; BC637; BC639 DESCRIPTION base collector emitter 1 handbook, . |
| Part Number | BC637 Datasheet |
|---|---|
| Description | NPN EPITAXIAL SILICON TRANSISTOR |
| Manufacturer | Fairchild Semiconductor |
| Overview | BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Para. dwidth Product VCB=30V, IE=0 VEB=5V, IC=0 VCE=2V, IC=5mA VCE=2V, IC=150mA VCE=2V, IC=500mA IC=500mA, IB=50mA VCE=2V, IC=500mA VCE=5V, IC=10mA, f=50MHz ©2002 Fairchild Semiconductor Corporation 1 TO-92 1. Emitter 2. Collector 3. Base Value 45 60 100 45 60 100 45 60 80 5 1 1.5 100 1 150 -65 ~ 150 . |