BC637
ST BC635 / BC637 / BC639
NPN Silicon Epitaxial Planar Transistor
Medium Power Transistors for driver stages of audio / video amplifiers
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage Collector Current Peak Collector Current Base Current Peak Base Current Power Dissipation Junction Temperature Storage Temperature Range
1.Emitter 2.Collector 3.Base TO-92 Plastic Package Weight approx. 0.19g
BC635 BC637 BC639
BC635 BC637 BC639
Symbol
VCBO
VCEO
VEBO IC ICM IB IBM Ptot Tj TS
Value
45 60 100 45 60 80 5
- 55 to + 150
Unit
V A A m A m A m W OC OC
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 15/03/2007
ST BC635 / BC637 / BC639
Characteristics at Ta = 25 OC Parameter
DC Current Gain at VCE = 2 V, IC = 5 m A at VCE = 2 V, IC = 150 m A at VCE = 2 V, IC = 500 m A Collector Cutoff...
