SeCoS Halbleitertechnologie GmbH BC637
NPN Type Plastic Encapsulate Transistors
MAXIMUM RATINGS
(TA=25 oC unless otherwise specified) PARAMETERS SYMBOLS Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature BC635 BC637 BC639 BC635 BC637 BC639 VCEO VCBO VEBO IC PC TJ,TSTG ELECTRICAL CHARACTERISoTICS (TA=25 oC unless otherwise specified) VALUES 45 60 80 45 60 100 5 1 0.625 150, -65 ~ 150 UNIT V V V V V V V A W oC PARAMETERS Collector - emitter breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector - emitter saturation voltage Base - emitter voltage Transition f