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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC635/D
High Current Transistors
NPN Silicon
COLLECTOR 2 3 BASE 1 EMITTER
BC635 BC637 BC639
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC 635 45 45 BC 637 60 60 5.0 0.5 625 5.0 1.5 12 – 55 to +150 BC 639 80 80 Unit Vdc Vdc Vdc Adc mW mW/°C Watt mW/°C °C
1 2 3
CASE 29–04, STYLE 14 TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.
BC637 Datasheet
