The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
BC637, BC639, BC639-16
High Current Transistors
NPN Silicon
Features
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating Collector - Emitter Voltage
Symbol
BC637 BC639
VCEO
Value 60 80
Unit Vdc
Collector - Base Voltage
BC637 BC639
VCBO
60 80
Vdc
Emitter - Base Voltage
Collector Current − Continuous
Total Device Dissipation Derate above 25°C
@
TA
=
25°C
VEBO IC PD
5.0 Vdc 1.0 Adc 625 mW 5.0 mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
PD 800 mW 12 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
200 °C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device.
BC637 Datasheet
