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BC635 - High Current Transistors

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Features

  • Pb.
  • Free Packages are Available.

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Datasheet Details

Part number BC635
Manufacturer ON Semiconductor
File Size 53.27 KB
Description High Current Transistors
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Full PDF Text Transcription

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BC635, BC637, BC639, BC639−16 High Current Transistors NPN Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO Vdc BC635 45 BC637 60 BC639 80 Collector - Base Voltage VCBO Vdc BC635 45 BC637 60 BC639 80 Emitter - Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VEBO IC PD 5.0 Vdc 1.0 Adc 625 mW 5.0 mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 800 mW 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Symbol RqJA Max 200 Unit °C/W Thermal Resistance, Junction−to−Case RqJC 83.
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