BC639 - High Current Transistors

onsemi

Download the BC639 datasheet PDF. This datasheet also covers the BC637 variant, as both devices belong to the same high current transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

These are Pb.
Free Devices.

📥 Download Datasheet

BC639 high current transistors by onsemi - Datasheet Preview — Note: The manufacturer provides a single datasheet file (BC637-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	BC639
Manufacturer	onsemi
File Size	92.32 KB
Description	High Current Transistors
Datasheet	BC639 Datasheet

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Other Datasheets by onsemi

Part Number	Description
BC639-16	High Current Transistors
BC635	High Current Transistors
BC636	PNP Epitaxial Silicon Transistor
BC636-16	High Current Transistors
BC637	High Current Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

BC637, BC639, BC639-16 High Current Transistors NPN Silicon Features • These are Pb−Free Devices* MAXIMUM RATINGS Rating Collector - Emitter Voltage Symbol BC637 BC639 VCEO Value 60 80 Unit Vdc Collector - Base Voltage BC637 BC639 VCBO 60 80 Vdc Emitter - Base Voltage Collector Current − Continuous Total Device Dissipation Derate above 25°C @ TA = 25°C VEBO IC PD 5.0 Vdc 1.0 Adc 625 mW 5.0 mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 800 mW 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device.