BC639 - NPN EPITAXIAL SILICON TRANSISTOR

Fairchild (now onsemi)

Datasheet Details

Part number	BC639
Manufacturer	Fairchild (now onsemi)
File Size	53.47 KB
Description	NPN EPITAXIAL SILICON TRANSISTOR
Datasheet	BC639 Datasheet

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Part Number	Description
BC63916	NPN Epitaxial Silicon Transistor
BC635	NPN EPITAXIAL SILICON TRANSISTOR
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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter VCER Collector-Emitter Voltage at RBE=1KΩ : BC635 : BC637 : BC639 VCES Collector-Emitter Voltage : BC635 : BC637 : BC639 VCEO Collector-Emitter Voltage : BC635 : BC637 : BC639 VEBO Emitter-Base Voltage IC Collector Current ICP Peak Collector Current IB Base Current PC Collector Power Dissipation TJ Junction Temperature TSTG Storage Temperature • PW=5ms, Duty Cycle=10% Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition BVCEO Collector-Emitter Breakdown Voltage : BC635 : BC637 : BC639 IC=10mA, IB=0 ICBO IEBO hFE1 hFE2 hFE3 VCE(