BC635 - High Current Transistors

Motorola Inc

Datasheet Details

Part number	BC635
Manufacturer	Motorola Inc
File Size	116.59 KB
Description	High Current Transistors
Datasheet	BC635 Datasheet
Additional preview pages of the BC635 datasheet.

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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC635/D High Current Transistors NPN Silicon COLLECTOR 2 3 BASE 1 EMITTER BC635 BC637 BC639 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC 635 45 45 BC 637 60 60 5.0 0.5 625 5.0 1.5 12 – 55 to +150 BC 639 80 80 Unit Vdc Vdc Vdc Adc mW mW/°C Watt mW/°C °C 1 2 3 CASE 29–04, STYLE 14 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.

Published: Mar 23, 2005 |