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BC636 - High Current Transistors

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC636/D High Current Transistors PNP Silicon COLLECTOR 2 3 BASE 1 EMITTER BC636 BC638 BC640 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC 636 –45 –45 BC 638 –60 –60 –5.0 –0.5 625 5.0 1.