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BC636 - PNP Epitaxial Silicon Transistor

General Description

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92 3 4.83X4.76 LEADFORMED PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Co

Key Features

  • Switching and Amplifier.

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Datasheet Details

Part number BC636
Manufacturer onsemi
File Size 195.72 KB
Description PNP Epitaxial Silicon Transistor
Datasheet download datasheet BC636 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PNP Epitaxial Silicon Transistor BC636 Features • Switching and Amplifier Applications • Complement to BC635 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector−Emitter Voltage at RBE = 1 kW VCER −45 V Collector−Emitter Voltage VCES −45 V Collector−Emitter Voltage VCEO −45 V Emitter−Base Voltage VEBO −5 V Collector Current IC −1 A Peak Collector Current ICP −1.5 A Base Current IB −100 mA Junction Temperature TJ 150 °C Storage Temperature TSTG −65 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.