FCA35N60 Datasheet | Fairchild Semiconductor

FCA35N60 N-Channel MOSFET March 2009 600V N-Channel MOSFET Features - 650V @ TJ = 150°C - Typ.RDS(on) = 0.079Ω - Ultra low gate charge ( Typ. Qg = 139nC ) - Low effective output capacitance ( Typ. Coss.eff = 340pF ) - 100% avalanche tested SuperFETTM Description SuperFETTM is Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable...