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FCA36N60NF - N-Channel MOSFET

General Description

The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs.

Overview

FCA36N60NF — N-Channel SupreMOS® FRFET® MOSFET FCA36N60NF N-Channel SupreMOS® FRFET® MOSFET 600 V, 34.

Key Features

  • RDS(on) = 80 mΩ (Typ. ) @ VGS = 10V, ID = 18 A.
  • Ultra Low Gate Charge (Typ. Qg = 86 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 338 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.