FCP110N65F Datasheet | Fairchild Semiconductor

- N-Channel Super FET® II FRFET® MOSFET December 2014 N-Channel Super FET® II FRFET® MOSFET 650 V, 35 A, 110 mΩ Features - 700 V @ TJ = 150°C - Typ. RDS(on) = 96 mΩ (Typ.) - Ultra Low Gate Charge (Typ. Qg = 98 n C) - Low Effective Output Capacitance (Typ. Coss(eff.) = 464 p F) - 100% Avalanche Tested - Ro HS pliant Applications - LCD / LED / PDP TV - Tele / Server Power Supplies - Solar Inverter - AC - DC Power Supply Description Super FET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, Super FET II MOSFET is very suitable for the switching power applications such as PFC, server/tele power, FPD TV power, ATX power...