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FCPF36N60NT - N-Channel MOSFET

Download the FCPF36N60NT datasheet PDF. This datasheet also covers the FCP36N60N variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs.

Key Features

  • RDS(on) = 81 mΩ (Typ. ) @ VGS = 10 V, ID = 18 A.
  • Ultra Low Gate Charge (Typ. Qg = 86 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 361 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FCP36N60N-FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Fairchild (now onsemi)

Part Number Description
FCPF380N60 N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FCP36N60N / FCPF36N60NT — N-Channel SupreMOS® MOSFET FCP36N60N / FCPF36N60NT N-Channel SupreMOS® MOSFET 600 V, 36 A, 90 mΩ December 2013 Features • RDS(on) = 81 mΩ (Typ.) @ VGS = 10 V, ID = 18 A • Ultra Low Gate Charge (Typ. Qg = 86 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 361 pF) • 100% Avalanche Tested • RoHS Compliant Application • Solar Inverter • AC-DC Power Supply Description The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness.