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FCPF7N60NT - MOSFET

Description

The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs.

Features

  • Typ RDS(on) = 460mΩ.
  • Ultra Low Gate Charge (typ. Qg = 17.8 nC).
  • Low Effective Output Capacitance (typ. Coss(eff. ) = 91 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.

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Datasheet Details

Part number FCPF7N60NT
Manufacturer Fairchild Semiconductor
File Size 683.84 KB
Description MOSFET
Datasheet download datasheet FCPF7N60NT Datasheet
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FCPF7N60NT — N-Channel SupreMOS® MOSFET FCPF7N60NT N-Channel MOSFET 600 V, 6.8 A, 0.52 Ω Features • Typ RDS(on) = 460mΩ • Ultra Low Gate Charge (typ. Qg = 17.8 nC) • Low Effective Output Capacitance (typ. Coss(eff.) = 91 pF) • 100% Avalanche Tested • RoHS Compliant Application • Solar Inverter • AC-DC Power Supply December 2013 Description The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness.
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