FDA62N28 Datasheet | Fairchild Semiconductor

FDA62N28 280V N-Channel MOSFET UniFET 280V N-Channel MOSFET Features - 62A, 280V, RDS(on) = 0.051Ω @VGS = 10 V - Low gate charge ( typical 77 nC) - Low Crss ( typical 83 pF) - Fast switching - 100% avalanche tested - Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power supplies and active...