Datasheet4U Logo Datasheet4U.com

FDA62N28 - N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 62A, 280V, RDS(on) = 0.051Ω @VGS = 10 V.
  • Low gate charge ( typical 77 nC).
  • Low Crss ( typical 83 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability TM.

📥 Download Datasheet

Datasheet preview – FDA62N28

Datasheet Details

Part number FDA62N28
Manufacturer Fairchild Semiconductor
File Size 726.46 KB
Description N-Channel MOSFET
Datasheet download datasheet FDA62N28 Datasheet
Additional preview pages of the FDA62N28 datasheet.

📁 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FDA62N28 280V N-Channel MOSFET UniFET FDA62N28 280V N-Channel MOSFET Features • 62A, 280V, RDS(on) = 0.051Ω @VGS = 10 V • Low gate charge ( typical 77 nC) • Low Crss ( typical 83 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D ! " G! ! " " " TO-3P G DS FDA Series www.DataSheet4U.
Published: |