FDB039N06 Datasheet | Fairchild Semiconductor

FDB039N06 N-Channel PowerTrench® MOSFET July 2009 N-Channel PowerTrench® MOSFET 60V, 174A, 3.9mΩ Features - RDS(on) = 2.95mΩ ( Typ.) @ VGS = 10V, ID = 75A - Fast Switching Speed - Low Gate Charge - High Performance Trench Technology for Extremely Low RDS(on) - High Power and Current Handling Capability - RoHS pliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application - DC to DC convertors / Synchronous Rectification MOSFET Maximum Ratings TC = 25oC unless otherwise...