FDB039N06 Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application DC to DC convertors / Synchronous Rectification D D G G S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol .. Package limitation current is 120A.
FDB039N06 Key Features
- RDS(on) = 2.95mΩ ( Typ.) @ VGS = 10V, ID = 75A
- Fast Switching Speed
- Low Gate Charge
- High Performance Trench Technology for Extremely Low RDS(on)
- High Power and Current Handling Capability
- RoHS pliant
- DC to DC convertors / Synchronous Rectification
- Derate above 25oC Parameter Ratings 60 ±20 -Continuous (TC = 25oC, Silicion Limited) -Continuous (TC = 100oC, Silicion L
- Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A
- 3.5 2.95 169