FDB047N10 - MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDB047N10
Manufacturer	Fairchild Semiconductor
File Size	565.29 KB
Description	MOSFET
Datasheet	FDB047N10 Datasheet
Additional preview pages of the FDB047N10 datasheet.

Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies Micro Solar Inverter D D G S D2-PAK G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted.Symbo

Features

RDS(on) = 3.9 mΩ (Typ. ) @ VGS = 10 V, ID = 75 A.
Fast Switching Speed.
Low Gate Charge.
High Performance Trench Technology for Extremely Low RDS(on).
High Power and Current Handling Capability.
RoHS Compliant.

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Published: Jan 11, 2017 |