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FDB20AN06A0 - N-Channel PowerTrench MOSFET

Key Features

  • r DS(ON) = 17mΩ (Typ. ), VGS = 10V, ID = 45A.
  • Qg(tot) = 15nC (Typ. ), VGS = 10V.
  • Low Miller Charge.
  • Low QRR Body Diode.
  • UIS Capability (Single Pulse and Repetitive Pulse).
  • Qualified to AEC Q101 Formerly developmental type 82547.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDB20AN06A0 / FDP20AN06A0 June 2003 FDB20AN06A0 / FDP20AN06A0 N-Channel PowerTrench® MOSFET 60V, 45A, 20mΩ Features • r DS(ON) = 17mΩ (Typ.), VGS = 10V, ID = 45A • Qg(tot) = 15nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82547 Applications • Motor / Body Load Control • ABS Systems • Powertrain Management • Injection Systems • DC-DC converters and Off-line UPS • Distributed Power Architectures and VRMs • Primary Switch for 12V and 24V systems DRAIN (FLANGE) D SOURCE DRAIN GATE SOURCE GATE G www.DataSheet4U.