FDB2670 Datasheet | Fairchild Semiconductor

FDP2670/FDB2670 November 2001 FDP2670/FDB2670 200V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 200V MOSFETs with low on-resistance and fast switching will benefit. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with parable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features - 19 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V - Low gate charge (27 nC typical) -...