FDC699P - P-Channel 2.5V PowerTrench MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDC699P
Manufacturer	Fairchild Semiconductor
File Size	159.49 KB
Description	P-Channel 2.5V PowerTrench MOSFET
Datasheet	FDC699P Datasheet
Additional preview pages of the FDC699P datasheet.

Product details

Description

This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. 12V). Battery management Load Switch Battery protection

Features

7 A,.
20 V RDS(ON) = 22 mΩ @ VGS =.
4.5 V RDS(ON) = 30 mΩ @ VGS =.
2.5 V.
High performance trench technology for extremely low RDS(ON).
Fast switching speed.
FLMP SuperSOT-6 package: Enhanced thermal performance in industry-standard package size G S S SuperSOT-6TM FLMP S S S 16 25 34 Bottom Drain Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source V.

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Published: Jan 14, 2016 |