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FDC699P - P-Channel 2.5V PowerTrench MOSFET

Description

This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.

12V).

Battery management Load Swit

Features

  • 7 A,.
  • 20 V RDS(ON) = 22 mΩ @ VGS =.
  • 4.5 V RDS(ON) = 30 mΩ @ VGS =.
  • 2.5 V.
  • High performance trench technology for extremely low RDS(ON).
  • Fast switching speed.
  • FLMP SuperSOT-6 package: Enhanced thermal performance in industry-standard package size G S S SuperSOT-6TM FLMP S S S 16 25 34 Bottom Drain Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source V.

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Full PDF Text Transcription

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FDC699P January 2004 FDC699P P-Channel 2.5V PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Applications • Battery management • Load Switch • Battery protection Features • –7 A, –20 V RDS(ON) = 22 mΩ @ VGS = –4.5 V RDS(ON) = 30 mΩ @ VGS = –2.
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