Datasheet Details
| Part number | FDC8884 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 319.39 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDC8884-FairchildSemiconductor.pdf |
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Overview: FDC8884 N-Channel Power Trench® MOSFET April 2015 FDC8884 N-Channel Power Trench® MOSFET 30 V, 6.
| Part number | FDC8884 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 319.39 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDC8884-FairchildSemiconductor.pdf |
|
|
|
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.
Application Primary Switch S D D Pin 1 G D D SuperSOTTM -6 S4 D5 D6 3G 2D 1D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) TC = 25 °C -Continuous TA = 25 °C -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range Thermal Characteristics (Note 3) (Note 1a) (Note 1a) (Note 1b) Ratings 30 ±20 8.0 6.5 25 1.6 0.8 -55 to +150 Units V V A W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 30 (Note 1a) 78 °C/W Device Marking .884 Device FDC8884 Package SSOT-6 Reel Size 7 ’’ Tape Width 8 mm Quantity 3000 units ©2012 Fairchild Semiconductor Corporation 1 FDC8884 Rev.1.3 .fairchildsemi.
FDC8884 N-Channel Power Trench® MOSFET SS SF DS DF G SS SF DS DF G Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250 μA, VGS = 0 V ID = 250 μA, referenced to 25 °C Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 30 V 18 mV/°C 1 μA 100 nA On Characteristics VGS(th) ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Gate to Source T
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