FDC8884 Datasheet | Fairchild Semiconductor

FDC8884 N-Channel Power Trench® MOSFET April 2015 N-Channel Power Trench® MOSFET 30 V, 6.5 A, 23 mΩ Features - Max r DS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A - Max r DS(on) = 30 mΩ at VGS = 4.5 V, ID = 6.0 A - High performance trench technology for extremely low r DS(on) - Fast switching speed - Ro HS pliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for r DS(on) switching performance. Application - Primary Switch Pin 1 Super SOTTM -6 S4 D5 D6 3G 2D 1D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) TC = 25 °C -Continuous TA = 25 °C -Pulsed Power Dissipation Power...