FDC8886 Description
Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6.0 A High performance trench technology for extremely low rDS(on) Fast switching speed RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.
FDC8886 Key Features
- Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A
- Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6.0 A
- High performance trench technology for extremely low rDS(on)
- Fast switching speed
- RoHS pliant
- Primary Switch
- Continuous
- Pulsed
- 55 to +150