FDD2512 - 150V N-Channel PowerTrench MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDD2512
Manufacturer	Fairchild Semiconductor
File Size	86.47 KB
Description	150V N-Channel PowerTrench MOSFET
Datasheet	FDD2512 Datasheet
Additional preview pages of the FDD2512 datasheet.

Product details

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

Features

6.7 A, 150 V RDS(ON) = 420 mΩ @ VGS = 10 V RDS(ON) = 470 mΩ @ VGS = 6 V.
Low gate charge (8nC typical).
Fast switching.
High performance trench technology for extremely low RDS(ON) . D G S TO-252 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
Continuous.
Pulsed Power Dissipation (Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b) TJ, TSTG O.

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Published: Mar 30, 2005 |