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FDD2512 Datasheet 150v N-channel Powertrench MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDD2512 August 2001 FDD2512 150V N-Channel PowerTrench MOSFET.

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs

Key Features

  • 6.7 A, 150 V RDS(ON) = 420 mΩ @ VGS = 10 V RDS(ON) = 470 mΩ @ VGS = 6 V.
  • Low gate charge (8nC typical).
  • Fast switching.
  • High performance trench technology for extremely low RDS(ON) . D G S TO-252 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
  • Continuous.
  • Pulsed Power Dissipation (Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b) TJ, TSTG O.

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FDD2512 Distributor