FDD2512 Datasheet | Fairchild Semiconductor

August 2001 150V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with parable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features - 6.7 A, 150 V RDS(ON) = 420 mΩ @ VGS = 10 V RDS(ON) = 470 mΩ @ VGS = 6 V - Low gate charge (8nC typical) - Fast switching - High performance trench...