Datasheet Details
| Part number | FDD2512 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 86.47 KB |
| Description | 150V N-Channel PowerTrench MOSFET |
| Datasheet |
 FDD2512 Datasheet
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General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
Key Features
- 6.7 A, 150 V RDS(ON) = 420 mΩ @ VGS = 10 V RDS(ON) = 470 mΩ @ VGS = 6 V.
- Low gate charge (8nC typical).
- Fast switching.
- High performance trench technology for extremely low RDS(ON) . D G S TO-252 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
- Continuous.
- Pulsed Power Dissipation (Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b) TJ, TSTG O.