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FDD2570 Datasheet 150v N-channel Powertrench MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDD2570 February 2001 FDD2570 150V N-Channel PowerTrench MOSFET General.

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs

Key Features

  • 4.7 A, 150 V. RDS(ON) = 80 mΩ @ VGS = 10 V RDS(ON) = 90 mΩ @ VGS = 6 V.
  • Low gate charge.
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability. D D G S TO-252 S G Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current.
  • Continuous.
  • Pulsed TA=25oC unless otherwise noted Parameter Ratings 150 ±20.

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