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FDD6030L - N-Channel MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance.

DC/DC converter Motor Drives Fea

Key Features

  • 12 A, 30 V RDS(ON) = 14.5 mΩ @ VGS = 10 V RDS(ON) = 21 mΩ @ VGS = 4.5 V.
  • Low gate charge.
  • Fast Switching Speed.
  • High performance trench technology for extremely low RDS(ON) D G S DTO-P-2A5K2 (TO-252) D G S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C (Note 3) @TA=25°C (Note 1a) Pulsed (Note 1a) Power Dissipation @.

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FDD6030L March 2015 FDD6030L 30V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Applications • DC/DC converter • Motor Drives Features • 12 A, 30 V RDS(ON) = 14.5 mΩ @ VGS = 10 V RDS(ON) = 21 mΩ @ VGS = 4.