FDD603AL - N-Channel MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDD603AL
Manufacturer	Fairchild Semiconductor
File Size	237.55 KB
Description	N-Channel MOSFET
Datasheet	FDD603AL Datasheet
Additional preview pages of the FDD603AL datasheet.

Product details

Description

This N-Channel logic level enhancement mode power field effect transistor is produced using Fairchilds proprietary, high cell density, DMOS technology.

This very high density process is tailored to minimize onstate resistance.

Features

33 A, 30 V. RDS(ON) = 0.023 Ω @ VGS = 10 V RDS(ON) = 0.037 Ω @ VGS = 4.5 V. Critical DC electrical parameters specified at elevated temperature. Rugged avalanche-rated internal source-drain diode can eliminate the need for external Zener Diode. High density cell design for extremely low RDS(ON).

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Published: Mar 30, 2005 |