Datasheet4U Logo Datasheet4U.com

FDD850N10L - MOSFET

General Description

This N-Channel MOSFET is produced using Fairchld Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance and maintain superior switching performance.

Consumer Appliances LED TV and Monitor Synchronous Rectific

Key Features

  • RDS(on) = 61 mΩ ( yp. ) @ VGS = 10 V, ID = 12 A.
  • RDS(on) = 64 mΩ (Typ. ) @ VGS = 5 V, ID = 12 A.
  • Low Gate Charge (Typ. 22.2 nC).
  • Low Crss (Typ. 42 pF).
  • Fast Switching.
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.
  • RoHS Compliant.

📥 Download Datasheet

More Datasheets from Fairchild (now onsemi)

Part Number Description
FDD850N10LD N-Channel PowerTrench MOSFET + Diode
FDD8580 N-Channel MOSFET
FDD8586 N-Channel PowerTrench MOSFET
FDD8424H Dual N & P-Channel PowerTrench MOSFET
FDD8424H_F085A Dual N & P-Channel PowerTrench MOSFET
FDD8426H Dual P and N-Channel MOSFET
FDD8444 N-Channel MOSFET
FDD8445 N-Channel MOSFET
FDD8445_F085 N-Channel MOSFET
FDD8447L N-Channel MOSFET

Full PDF Text Transcription for FDD850N10L (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FDD850N10L. For precise diagrams, tables, and layout, please refer to the original PDF.

View original datasheet text
FDD850N10L — N-Channel PowerTrench® MOSFET FDD850N10L N-Channel PowerTrench® MOSFET 100 V, 15.7 A, 75 mΩ November 2013 Features • RDS(on) = 61 mΩ ( yp.) @ VGS = 10 V, ID = 12 A • RDS(on) = 64 mΩ (Typ.) @ VGS = 5 V, ID = 12 A • Low Gate Charge (Typ. 22.2 nC) • Low Crss (Typ. 42 pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchld Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance and maintain superior switching performance. Application • Consumer Appliances • LED TV and Monitor • Synchronous Rectification • Uninterruptible Power Supply • Micro Solar Inverter D G S D D-PAK G MOSFET Maximum Ratings TC = 25oC unless otherwise noted.