Fairchild Semiconductor FDD850N10L
This N-Channel MOSFET is produced using Fairchld Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance and maintain superior switching performance.| Part No. | FDD850N10L |
|---|---|
| Datasheet | FDD850N10L Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | MOSFET |
| Buy | Stock & Price |
FEATURES
● RDS(on) = 61 mΩ ( yp.) @ VGS = 10 V, ID = 12 A● RDS(on) = 64 mΩ (Typ.) @ VGS = 5 V, ID = 12 A
● Low Gate Charge (Typ. 22.2 nC)
● Low Crss (Typ. 42 pF)
● Fast Switching
● 100% Avalanche Tested
● Improved dv/dt Capability
● RoHS Compliant
DESCRIPTION
Application● Consumer Appliances
● LED TV and Monitor
● Synchronous Rectification
● Uninterruptible Power Supply
● Micro Solar Inverter D G S D D-PAK G MOSFET
MAXIMUM RATINGS
TC = 25oC unless otherwise noted. S Symbol VDSS VGSS ID IDM EAS dv/dt PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC) - Continuou
