FDD8580 Datasheet | Fairchild Semiconductor

FDD8580/FDU8580 N-Channel PowerTrench® MOSFET July 2006 FDD8580/FDU8580 N-Channel PowerTrench® MOSFET 20V, 35A, 9mΩ Features General Description - Max rDS(on) = 9mΩ at VGS = 10V, ID = 35A - Max rDS(on) =13mΩ at VGS = 4.5V, ID = 33A - Low gate charge: Qg(TOT) = 19nC(Typ), VGS = 10V - Low gate resistance - 100% Avalanche tested - RoHS pliant tm This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Application - Vcore DC-DC for Desktop puters and Servers - VRM for Intermediate Bus...