FDD8580 Description
Max rDS(on) = 9mΩ at VGS = 10V, ID = 35A Max rDS(on) =13mΩ at VGS = 4.5V, ID = 33A Low gate charge: Qg(TOT) = 19nC(Typ), VGS = 10V Low gate resistance 100% Avalanche tested RoHS pliant tm This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge,...
FDD8580 Key Features
- Max rDS(on) = 9mΩ at VGS = 10V, ID = 35A
- Max rDS(on) =13mΩ at VGS = 4.5V, ID = 33A
- Low gate charge: Qg(TOT) = 19nC(Typ), VGS = 10V
- Low gate resistance
- 100% Avalanche tested
- RoHS pliant
- Vcore DC-DC for Desktop puters and Servers
- VRM for Intermediate Bus Architecture