FDD8586 Description
Max rDS(on) = 5.5mΩ at VGS = 10V, ID = 35A Max rDS(on) = 8.5mΩ at VGS = 4.5V, ID = 33A Low gate charge: Qg(TOT) = 34nC(Typ), VGS = 10V Low gate resistance 100% Avalanche tested RoHS pliant Vcore DC-DC for Desktop puters and Servers VRM for Intermediate Bus Architecture tm This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either...
FDD8586 Key Features
- Max rDS(on) = 5.5mΩ at VGS = 10V, ID = 35A
- Max rDS(on) = 8.5mΩ at VGS = 4.5V, ID = 33A
- Low gate charge: Qg(TOT) = 34nC(Typ), VGS = 10V
- Low gate resistance
- 100% Avalanche tested
- RoHS pliant
- Vcore DC-DC for Desktop puters and Servers
- VRM for Intermediate Bus Architecture