FDD8586 Overview
Key Features
- Max rDS(on) = 5.5mΩ at VGS = 10V, ID = 35A
- Max rDS(on) = 8.5mΩ at VGS = 4.5V, ID = 33A
| Part | FDD8586 |
|---|---|
| Description | N-Channel PowerTrench MOSFET |
| Category | MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Size | 406.15 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| A2SHB | HAOHAI | N-Channel MOSFET |
| FCPF360N65S3R0L | onsemi | N-Channel MOSFET |