FDD8586 Datasheet | Fairchild Semiconductor

.. FDD8586/FDU8586 N-Channel PowerTrench® MOSFET January 2007 FDD8586/FDU8586 N-Channel PowerTrench® MOSFET 20V, 35A, 5.5mΩ Features General Description - Max rDS(on) = 5.5mΩ at VGS = 10V, ID = 35A - Max rDS(on) = 8.5mΩ at VGS = 4.5V, ID = 33A - Low gate charge: Qg(TOT) = 34nC(Typ), VGS = 10V - Low gate resistance - 100% Avalanche tested - RoHS pliant - Vcore DC-DC for Desktop puters and Servers - VRM for Intermediate Bus Architecture tm This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low...