Datasheet Summary
FDD86250 N-Channel Shielded Gate PowerTrench® MOSFET
April 2015
N-Channel Shielded Gate PowerTrench® MOSFET
150 V, 51 A, 22 mΩ
Features
General Description
- Shielded Gate MOSFET Technology
- Max rDS(on) = 22 mΩ at VGS = 10 V, ID = 8 A
- Max rDS(on) = 31 mΩ at VGS = 6 V, ID = 6.5 A
- 100% UIL tested
- RoHS pliant
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Application
- DC
- DC Conversion
DT O-P-2A5K2 (T O -25 2)
MOSFET Maximum Ratings TC = 25 °C unless...
