Datasheet Summary
FDD86252 N-Channel Shielded Gate PowerTrench® MOSFET
N-Channel Shielded Gate PowerTrench® MOSFET
150 V, 27 A, 52 mΩ
March 2015
Features
General Description
- Shielded Gate MOSFET Technology
- Max rDS(on) = 52 mΩ at VGS = 10 V, ID = 5 A
- Max rDS(on) = 72 mΩ at VGS = 6 V, ID = 4 A
- 100% UIL tested
- RoHS pliant
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Application
- DC
- DC Conversion
DT O-P-2A5K2 (T O -25 2)
MOSFET Maximum Ratings TC = 25 °C unless...