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FDD86252 - N-Channel MOSFET

General Description

Shielded Gate MOSFET Technology Max rDS(on) = 52 mΩ at VGS = 10 V, ID = 5 A Max rDS(on) = 72 mΩ at VGS = 6 V, ID = 4 A 100% UIL tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process th

Key Features

  • General.

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FDD86252 N-Channel Shielded Gate PowerTrench® MOSFET FDD86252 N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 27 A, 52 mΩ March 2015 Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 52 mΩ at VGS = 10 V, ID = 5 A „ Max rDS(on) = 72 mΩ at VGS = 6 V, ID = 4 A „ 100% UIL tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.