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FDH5500_F085 - N-Channel UltraFET Power MOSFET

Key Features

  • Typ rDS(on) = 5.2mΩ at VGS = 10V, ID = 75A.
  • Typ Qg(10) = 118nC at VGS = 10V.
  • Simulation Models -Temperature Compensated PSPICE and.

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Full PDF Text Transcription (Reference)

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www.DataSheet.co.kr FDH5500_F085 N-Channel UltraFET Power MOSFET October 2008 FDH5500_F085 N-Channel UltraFET Power MOSFET 55V, 75A, 7mΩ Features „ Typ rDS(on) = 5.2mΩ at VGS = 10V, ID = 75A „ Typ Qg(10) = 118nC at VGS = 10V „ Simulation Models -Temperature Compensated PSPICE and SABERTM Models „ Peak Current vs Pulse Width Curve „ UIS Rating Curve „ Related Literature -TB334, “Guidelines for Soldering Surface Mount Componets to PC Boards“ „ Qualified to AEC Q101 „ RoHS Compliant Applications „ DC Linear Mode Control „ Solenoid and Motor Control „ Switching Regulators „ Automotive Systems ©2008 Fairchild Semiconductor Corporation FDH5500_F085 Rev. A1 1 www.fairchildsemi.com Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.