FDI3652 - N-Channel MOSFET

Fairchild (now onsemi)

Key Features

r DS(ON) = 14mΩ (Typ. ), VGS = 10V, ID = 61A.
Qg(tot) = 41nC (Typ. ), VGS = 10V.
Low Miller Charge.
Low QRR Body Diode.
UIS Capability (Single Pulse and Repetitive Pulse).
Qualified to AEC Q101 Formerly developmental type 82769.

FDI3652 n-channel mosfet by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	FDI3652
Manufacturer	Fairchild (now onsemi)
File Size	272.26 KB
Description	N-Channel MOSFET
Datasheet	FDI3652 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDB3652 / FDP3652 / FDI3652 October 2002 FDB3652 / FDP3652 / FDI3652 N-Channel PowerTrench® MOSFET 100V, 61A, 16mΩ Features • r DS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 61A • Qg(tot) = 41nC (Typ.