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FDI8441_F085 - N-Channel PowerTrench MOSFET

Key Features

  • Typ rDS(on) = 2.2mΩ at VGS = 10V, ID = 80A.
  • Typ Qg(10) = 215nC at VGS = 10V.
  • Low Miller Charge.
  • Low Qrr Body Diode.
  • UIS Capability (Single Pulse and Repetitive Pulse).
  • Qualified to AEC Q101.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDI8441_F085 N-Channel PowerTrench® MOSFET May 2010 FDI8441_F085 N-Channel PowerTrench® MOSFET 40V, 80A, 2.7mΩ Features „ Typ rDS(on) = 2.2mΩ at VGS = 10V, ID = 80A „ Typ Qg(10) = 215nC at VGS = 10V „ Low Miller Charge „ Low Qrr Body Diode „ UIS Capability (Single Pulse and Repetitive Pulse) „ Qualified to AEC Q101 „ RoHS Compliant Applications „ Automotive Engine Control „ Powertrain Management „ Solenoid and Motor Drivers „ Electronic Steering „ Integrated Starter / Alternator „ Distributed Power Architectures and VRMs „ Primary Switch for 12V Systems ©2010 Fairchild Semiconductor Corporation FDI8441_F085 Rev.A1 1 www.fairchildsemi.