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FDL100N50F - N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • RDS(on) = 0.043Ω ( Typ. )@ VGS = 10V, ID = 50A.
  • Low gate charge ( Typ. 238nC).
  • Low Crss ( Typ. 64pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS Compliant UniFETTM May 2009.

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Datasheet Details

Part number FDL100N50F
Manufacturer Fairchild Semiconductor
File Size 757.13 KB
Description N-Channel MOSFET
Datasheet download datasheet FDL100N50F Datasheet
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FDL100N50F N-Channel MOSFET FDL100N50F N-Channel MOSFET,FRFET 500V, 100A, 0.055Ω Features • RDS(on) = 0.043Ω ( Typ.)@ VGS = 10V, ID = 50A • Low gate charge ( Typ. 238nC) • Low Crss ( Typ. 64pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS Compliant UniFETTM May 2009 Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
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