FDL100N50F - N-Channel MOSFET

Datasheet Summary

Features

With TO-247 packaging.
With low gate drive requirements.
Easy to drive.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

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Datasheet Details

Part number	FDL100N50F
Manufacturer	INCHANGE
File Size	255.85 KB
Description	N-Channel MOSFET
Datasheet	FDL100N50F Datasheet
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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 100 60 400 PD Total Dissipation 2500 Tj Operating Junction Temperature -50~150 Tstg Storage Temperature -50~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.05 UNIT ℃/W FDL100N50F isc website：www.iscsemi.

Published: Oct 5, 2020 |