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FDL100N50F - N-Channel MOSFET

General Description

on planar stripe and DMOS technology.

state resistance, and to provide better switching performance and higher avalanche energy strength.

Key Features

  • RDS(on) = 43 mW (Typ. ) @ VGS = 10 V, ID = 50 A.
  • Low Gate Charge (Typ. 238 nC).
  • Low Crss (Typ. 64 pF).
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, UniFETtFRFET® 500 V, 100 A, 55 mW FDL100N50F Description UniFET MOSFET is onsemi's high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode's reverse recovery performance of UniFET FRFET MOSFET has been enhanced by lifetime control. Its trr is less than 100 nsec and the reverse dv/dt immunity is 15 V/ns while normal planar MOSFET's have over 200 nsec and 4.5 V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET's body diode is significant.