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FDL100N50F - N-Channel MOSFET

Datasheet Summary

Description

on planar stripe and DMOS technology.

state resistance, and to provide better switching performance and higher avalanche energy strength.

Features

  • RDS(on) = 43 mW (Typ. ) @ VGS = 10 V, ID = 50 A.
  • Low Gate Charge (Typ. 238 nC).
  • Low Crss (Typ. 64 pF).
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.
  • RoHS Compliant.

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Datasheet preview – FDL100N50F

Datasheet Details

Part number FDL100N50F
Manufacturer ON Semiconductor
File Size 455.50 KB
Description N-Channel MOSFET
Datasheet download datasheet FDL100N50F Datasheet
Additional preview pages of the FDL100N50F datasheet.

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Full PDF Text Transcription

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MOSFET – N-Channel, UniFETtFRFET® 500 V, 100 A, 55 mW FDL100N50F Description UniFET MOSFET is onsemi's high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode's reverse recovery performance of UniFET FRFET MOSFET has been enhanced by lifetime control. Its trr is less than 100 nsec and the reverse dv/dt immunity is 15 V/ns while normal planar MOSFET's have over 200 nsec and 4.5 V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET's body diode is significant.
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