FDL100N50F Datasheet | onsemi

Description Uni FET MOSFET is onsemi's high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on- state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode's reverse recovery performance of Uni FET FRFET MOSFET has been enhanced by lifetime control. Its trr is less than 100 nsec and the reverse dv/dt immunity is 15 V/ns while normal planar MOSFET's have over 200 nsec and 4.5 V/nsec respectively. Therefore, it can remove additional ponent and improve system reliability in certain applications in which the performance of MOSFET's body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. Features - RDS(on) = 43 m W (Typ.) @ VGS = 10 V, ID = 50 A - Low Gate Charge (Typ. 238 n C) - Low Crss (Typ. 64 p F) - 100% Avalanche Tested - Improved dv/dt Capability - Ro HS pliant Applications - Uninterruptible Power Supply - AC- DC Power Supply DATA SHEET .onsemi. TO- 264- 3LD CASE 340CA MARKING DIAGRAM FDL100 N50F AYWWZZ A YWW ZZ = Assembly Location = Date Code = Assembly Lot ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. © Semiconductor ponents Industries, LLC, 2022 January, 2025 - Rev. 1 Publication Order Number: FDL100N50F/D MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Parameter Unit VDSS VGSS Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC =...