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FDMA3027PZ - MOSFET

General Description

Max rDS(on) = 87 mΩ at VGS = -10 V, ID = -3.3 A Max rDS(on) = 152 mΩ at VGS = -4.5 V, ID = -2.3 A HBM ESD protection level > 2 KV typical (Note 3) Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm RoHS Compliant This device is desig

Key Features

  • General.

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FDMA3027PZ Dual P-Channel PowerTrench® MOSFET FDMA3027PZ Dual P-Channel PowerTrench® MOSFET -30 V, -3.3 A, 87 mΩ July 2014 Features General Description „ Max rDS(on) = 87 mΩ at VGS = -10 V, ID = -3.3 A „ Max rDS(on) = 152 mΩ at VGS = -4.5 V, ID = -2.3 A „ HBM ESD protection level > 2 KV typical (Note 3) „ Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm „ RoHS Compliant This device is designed specifically as a single package solution for dual switching requirements such as gate driver for larger Mosfets. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.