FDMA3027PZ
Features
General Description
- Max r DS(on) = 87 mΩ at VGS = -10 V, ID = -3.3 A
- Max r DS(on) = 152 mΩ at VGS = -4.5 V, ID = -2.3 A
- HBM ESD protection level > 2 KV typical (Note 3)
- Low profile
- 0.8 mm maximum
- in the new package Micro FET 2x2 mm
- Ro HS pliant
This device is designed specifically as a single package solution for dual switching requirements such as gate driver for larger Mosfets. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. The Micro FET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. G-S zener has been added to enhance ESD voltage level.
Applications
- Load Switch
- Discrete Gate Driver
PIN 1 S1 G1 D2
D1 D2
S1 1 G1 2
6 D1 5 G2
D1 G2 S2
Top Bottom Micro FET 2x2
D2 3
4 S2
MOSFET Maximum...
