Datasheet Details
| Part number | FDMC612PZ |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 285.87 KB |
| Description | MOSFET |
| Datasheet | FDMC612PZ-FairchildSemiconductor.pdf |
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Overview: FDMC612PZ P-Channel PowerTrench® MOSFET FDMC612PZ P-Channel PowerTrench® MOSFET -20 V, -14 A, 8.
| Part number | FDMC612PZ |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 285.87 KB |
| Description | MOSFET |
| Datasheet | FDMC612PZ-FairchildSemiconductor.pdf |
|
|
|
Max rDS(on) = 8.4 mΩ at VGS = -4.5 V, ID = -14 A Max rDS(on) = 13 mΩ at VGS = -2.5 V, ID = -11 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Termination is Lead-free and RoHS pliant HBM ESD capability level > 3.6 KV typical (Note 4) This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(ON), switching performance and ruggedness.
Applications Battery Management Load Switch 8765 DD D D S D SD Pin 1 SD 1 234 Top GS S S Bottom Pin 1 G D MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -
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