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FDMC612PZ - MOSFET

General Description

Max rDS(on) = 8.4 mΩ at VGS = -4.5 V, ID = -14 A Max rDS(on) = 13 mΩ at VGS = -2.5 V, ID = -11 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Terminati

Key Features

  • General.

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FDMC612PZ P-Channel PowerTrench® MOSFET FDMC612PZ P-Channel PowerTrench® MOSFET -20 V, -14 A, 8.4 mΩ October 2013 Features General Description „ Max rDS(on) = 8.4 mΩ at VGS = -4.5 V, ID = -14 A „ Max rDS(on) = 13 mΩ at VGS = -2.5 V, ID = -11 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ Termination is Lead-free and RoHS Compliant „ HBM ESD capability level > 3.6 KV typical (Note 4) This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(ON), switching performance and ruggedness. Applications „ Battery Management „ Load Switch 8765 DD D D S D SD Pin 1 SD 1 234 Top GS S S Bottom Pin 1 G D MLP 3.3x3.