FDMC612PZ
Overview
Max rDS(on) = 8.4 mΩ at VGS = -4.5 V, ID = -14 A Max rDS(on) = 13 mΩ at VGS = -2.5 V, ID = -11 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Termination is Lead-free and RoHS Compliant HBM ESD capability level > 3.6 KV typical (Note 4) This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(ON), switching performance and ruggedness.
