FDMC7660 Description
Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 20 A Max rDS(on) = 3.3 mΩ at VGS = 4.5 V, ID = 18 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load...
FDMC7660 Key Features
- Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 20 A
- Max rDS(on) = 3.3 mΩ at VGS = 4.5 V, ID = 18 A
- High performance technology for extremely low rDS(on)
- Termination is Lead-free and RoHS pliant