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FDMC7660 - N-Channel PowerTrench MOSFET

General Description

Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 20 A Max rDS(on) = 3.3 mΩ at VGS = 4.5 V, ID = 18 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s a

Key Features

  • General.

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FDMC7660 N-Channel PowerTrench® MOSFET June 2012 FDMC7660 N-Channel PowerTrench® MOSFET 30 V, 20 A, 2.2 mΩ Features General Description „ Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 20 A „ Max rDS(on) = 3.3 mΩ at VGS = 4.5 V, ID = 18 A „ High performance technology for extremely low rDS(on) „ Termination is Lead-free and RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.