FDMC7660DC Description
This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process. Advancements in both silicon and DUAL COOL package technologies have been bined to offer the lowest RDS(on) while maintaining excellent switching performance by extremely low Junction−to−Ambient.
FDMC7660DC Key Features
- DUAL COOL Top Side Cooling PQFN Package
- Max RDS(on) = 2.2 mW at VGS = 10 V, ID = 22A
- Max RDS(on) = 3.3 mW at VGS = 4.5 V, ID = 18 A
- High Performance Technology for Extremely Low RDS(on)
- SyncFETt Schottky Body Diode
- Pb-Free, Halide Free and RoHS pliant
FDMC7660DC Applications
- Synchronous Rectifier for DC/DC Converters