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FDMC7660S - N-Channel Power Trench SyncFET

General Description

The FDMC7660S has been designed to minimize losses in power conversion applications.

Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.

Key Features

  • Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 20 A.
  • Max rDS(on) = 2.95 mΩ at VGS = 4.5 V, ID = 18 A.
  • High performance technology for extremely low rDS(on).
  • Termination is Lead-free and RoHS Compliant General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMC7660S N-Channel Power Trench® SyncFET™ January 2014 FDMC7660S N-Channel Power Trench® SyncFET™ 30 V, 20 A, 2.2 mΩ Features „ Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 20 A „ Max rDS(on) = 2.95 mΩ at VGS = 4.5 V, ID = 18 A „ High performance technology for extremely low rDS(on) „ Termination is Lead-free and RoHS Compliant General Description The FDMC7660S has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.